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Electronic component:Description:Manuf.PackagePinsT°minT°maxDatasheet
2N588080 V, complementary PNP selicon high-power transistordistributor-2-65°C200°C186 K
2N5880Complementary silicon high-power transistordistributor-2-65°C200°C180 K
2N5881Complementary silicon high-power transistordistributor-2-65°C200°C180 K
2N5882Complementary silicon high-power transistordistributor-2-65°C200°C180 K
2N5883Complementary silicon high-power transistordistributor-2-65°C200°C183 K
2N5884Complementary silicon high-power transistordistributor-2-65°C200°C183 K
2N5885Complementary silicon high-power transistordistributor-2-65°C200°C183 K
2N5886Complementary silicon high-power transistordistributor-2-65°C200°C183 K
2N5886COMPLEMENTARY SILICON HIGH POWER TRANSISTORSGS-Thomson-Microelectronics----41 K
UCN5881EPBiMOS II dual 8-Bit latched driver with read backAllegro-MicroSystems-Inc--44-20°C85°C79 K
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