| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| 2N5881 | 60 V, complementary NPN selicon high-power transistor | distributor | - | 2 | -65°C | 200°C | 186 K |
| 2N5882 | 80 V, complementary NPN selicon high-power transistor | distributor | - | 2 | -65°C | 200°C | 186 K |
| 2N5883 | 60 V, complementary PNP selicon high-power transistor | distributor | - | 2 | -65°C | 200°C | 190 K |
| 2N5884 | 80 V, complementary PNP selicon high-power transistor | distributor | - | 2 | -65°C | 200°C | 190 K |
| 2N5884 | hfe min 20 Transistor polarity PNP Current Ic continuous max 25 A Voltage Vceo 80 V Current Ic (hfe) 10 A Power Ptot 200 W Temperature power 25 ?C Transistors number of 1 | SGS-Thomson-Microelectronics | - | - | - | - | 68 K |
| 2N5885 | 60 V, complementary NPN selicon high-power transistor | distributor | - | 2 | -65°C | 200°C | 190 K |
| 2N5886 | 80 V, complementary NPN selicon high-power transistor | distributor | - | 2 | -65°C | 200°C | 190 K |
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