Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
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NTE326 | Silicon P-channel JFET transistor. General purpose AF amplifier. | distributor | - | 3 | -65°C | 135°C | 21 K |
NTE327 | Silicon NPN transistor. Power amplifier, switch. | distributor | TO3 | 2 | -65°C | 200°C | 24 K |
NTE328 | Silicon NPN transistor. Power amplifier, switch. | distributor | TO3 | 2 | -65°C | 200°C | 25 K |
NTE329 | Silicon NPN transistor. RF power amplifier, CB. | distributor | - | 3 | - | - | 24 K |
NTE3300 | Insulated gate bipolar transistor. N-channel enhancement mode, high speed switch. | distributor | TO220 | 3 | 0°C | 150°C | 19 K |
NTE3301 | Insulated gate bipolar transistor. N-channel enhancement mode, high speed switch. | distributor | TO220 | 3 | 0°C | 150°C | 19 K |
NTE3302 | Insulated gate bipolar transistor. N-channel enhancement mode, high speed switch. | distributor | TO220 | 3 | 0°C | 150°C | 19 K |
NTE3303 | Insulated gate bipolar transistor. N-channel enhancement mode, high speed switch. | distributor | TO220 | 3 | 0°C | 150°C | 19 K |
NTE331 | Silicon complementary NPN transistor. Audio power amp, switch. | distributor | TO220 | 3 | 0°C | 150°C | 21 K |
NTE332 | Silicon complementary PNP transistor. Audio power amp, switch. | distributor | TO220 | 3 | 0°C | 150°C | 21 K |
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