| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| NTE3310 | Insulated gate bipolar transistor. N-channel enhancement mode, high speed switch. | distributor | - | 3 | 0°C | 150°C | 18 K |
| NTE3311 | Insulated gate bipolar transistor. N-channel enhancement mode, high speed switch. | distributor | - | 3 | 0°C | 150°C | 18 K |
| NTE3312 | Insulated gate bipolar transistor. N-channel enhancement mode, high speed switch. | distributor | - | 3 | 0°C | 150°C | 18 K |
| NTE3320 | Insulated gate bipolar transistor. N-channel enhancement mode, high speed switch. | distributor | - | 3 | 0°C | 150°C | 20 K |
| NTE3321 | Insulated gate bipolar transistor. N-channel enhancement mode, high speed switch. | distributor | - | 3 | 0°C | 150°C | 20 K |
| NTE3322 | Insulated gate bipolar transistor. N-channel enhancement mode, high speed switch. | distributor | - | 3 | 0°C | 150°C | 20 K |
| NTE3323 | Insulated gate bipolar transistor. N-channel enhancement mode, high speed switch. | distributor | - | 3 | 0°C | 150°C | 20 K |
| NTE337 | Silicon NPN transistor. RF power amp, driver. | distributor | T72H | 4 | -65°C | 200°C | 22 K |
| NTE340 | Silicon NPN transistor. RF power output, high frequency. | distributor | TO92 | 3 | 0°C | 150°C | 19 K |
| NTE342 | Silicon NPN transistor. RF power output (Po = 6W, 175MHz). | distributor | - | 3 | 0°C | 150°C | 21 K |
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