| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| 15KP210 | Glass passivated junction transient voltage suppressor. Vrwm = 210 V. Vbr(min/max) = 231/296.1 V @ It = 1.0 mA. Ir = 5 uA. Vc = 376 V @ Ipp = 40 A. | distributor | - | 2 | -50°C | 175°C | 63 K |
| AKBP210 | 1000 V, 2 A Avalanche bridge rectifier | distributor | KBP | 4 | -50°C | 150°C | 19 K |
| FKBP210 | 1000 V, 2 A, fast recovery bridge rectifier | distributor | KBP | 4 | -50°C | 150°C | 21 K |
| GBP210 | 1000V, 2.0A glass passivated bridge rectifier | distributor | SIL | 4 | -55°C | 125°C | 47 K |
| GBP210 | 1000V, 2.0A glass passivated bridge rectifier | distributor | SIL | 4 | -55°C | 125°C | 47 K |
| KBP210 | 1000 V, 2 A, silicon bridge rectifier | distributor | KBP | 4 | -50°C | 125°C | 18 K |
| TP2104K1 | 40V P-channel enhancement-mode vertical DMOS FET | distributor | - | 3 | -55°C | 150°C | 455 K |
| TP2104N3 | 40V P-channel enhancement-mode vertical DMOS FET | distributor | - | 3 | -55°C | 150°C | 455 K |
| TP2104ND | 40V P-channel enhancement-mode vertical DMOS FET | distributor | Die | 3 | -55°C | 150°C | 455 K |
| VP2106N3 | 60V P-channel enhancement-mode vertical DMOS FET | distributor | - | 3 | -55°C | 150°C | 456 K |
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