Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
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PMBF107 | 200 V, N-channel enhancement mode vertical D-MOS transistor | Philips-Semiconductors | SOT | 3 | - | - | 60 K |
PMBF107 | N-channel enhancement mode vertical D-MOS transistor. | Philips-Semiconductors | SOT23 | 3 | 0°C | 150°C | 70 K |
PMBF170 | N-channel enhancement mode vertical D-MOS transistor. | Philips-Semiconductors | SOT23 | 3 | 0°C | 150°C | 56 K |
PMBFJ175 | P-channel silicon field-effect transistors | Philips-Semiconductors | SOT23 | - | - | - | 34 K |
PMBFJ176 | P-channel silicon field-effect transistors | Philips-Semiconductors | SOT23 | - | - | - | 34 K |
PMBFJ177 | P-channel silicon field-effect transistors | Philips-Semiconductors | SOT23 | - | - | - | 34 K |
PMBFJ210 | 15 mA, N-channel field-effect transistor | Philips-Semiconductors | SOT | 3 | - | - | 100 K |
PMBFJ211 | 20 mA, N-channel field-effect transistor | Philips-Semiconductors | SOT | 3 | - | - | 100 K |
PMBFJ212 | 40 mA, N-channel field-effect transistor | Philips-Semiconductors | SOT | 3 | - | - | 100 K |
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