| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| GL1PR112 | 2mm, forming type, colored diffusion, compact LED lamp for backlight/indicator | Sharp | __ | 2 | -25°C | 85°C | 98 K |
| GL1PR112 | Mini-mold LED lamp | Sharp | - | 2 | -25°C | 85°C | 98 K |
| R1120N201A-TR | Low noise 150mA LDO regulator. Output voltage 2.0V. "L" active type. Standard taping specification TR | distributor | - | 5 | -40°C | 85°C | 187 K |
| R1120N211A-TR | Low noise 150mA LDO regulator. Output voltage 2.1V. "L" active type. Standard taping specification TR | distributor | - | 5 | -40°C | 85°C | 187 K |
| R1120N221A-TR | Low noise 150mA LDO regulator. Output voltage 2.2V. "L" active type. Standard taping specification TR | distributor | - | 5 | -40°C | 85°C | 187 K |
| R1120N231A-TR | Low noise 150mA LDO regulator. Output voltage 2.3V. "L" active type. Standard taping specification TR | distributor | - | 5 | -40°C | 85°C | 187 K |
| UNR1123 | Silicon PNP epitaxial planer transistor with biult-in resistor | Panasonic---Semiconductor-Company-of-Matsushita-Electronics-Corporation | - | - | - | - | 84 K |
| UNR1124 | Silicon PNP epitaxial planer transistor with biult-in resistor | Panasonic---Semiconductor-Company-of-Matsushita-Electronics-Corporation | - | - | - | - | 84 K |
| UNR112X | Silicon PNP epitaxial planer transistor with biult-in resistor | Panasonic---Semiconductor-Company-of-Matsushita-Electronics-Corporation | - | - | - | - | 84 K |
| UNR112Y | Silicon PNP epitaxial planer transistor with biult-in resistor | Panasonic---Semiconductor-Company-of-Matsushita-Electronics-Corporation | - | - | - | - | 84 K |
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