| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| IRFR120N | HEXFET power MOSFET. VDSS = 100V, RDS(on) = 0.21 Ohm, ID = 9.4A | International-Rectifier | - | 3 | -55°C | 175°C | 142 K |
| IRFR120N | HEXFET power MOSFET. VDSS = 100V, RDS(on) = 0.21 Ohm, ID = 9.4A | International-Rectifier | - | 3 | -55°C | 175°C | 142 K |
| MUR120 | SWITCHMODE power rectifier | Motorola | PDIP | 2 | -65°C | 175°C | 115 K |
| R1200 | 0.5 mA high voltage silicon rectifier | distributor | - | 2 | -65°C | 175°C | 330 K |
| R1200 | High voltage silicon rectifier. Max recurrent peak reverse voltage 1200V, max RMS voltage 840V, max DC blocking voltage 1200V. Max average forward rectified current 500mA at Ta=50degC. | distributor | - | 2 | -65°C | 175°C | 19 K |
| R1200F | 0.5 mA high voltage fast recovery rectifier | distributor | - | 2 | -65°C | 175°C | 410 K |
| R1200F | High voltage fast recovery rectifier. Max recurrent peak reverse voltage 1200V, max RMS voltage 840V, max DC blocking voltage 1200V. Max average forward rectified current 500mA at Ta=50degC. | distributor | - | 2 | -65°C | 175°C | 20 K |
| SR120 | Schottky barrier rectifier. Max recurrent peak reverse voltage 20V, max RMS voltage 14V, max DC blocking voltage 20V. Max average forward recftified current 1.0A at 9.5mm lead length. | distributor | - | 2 | -65°C | 125°C | 282 K |
| USR120A | High Voltage Rectifier | Microsemi-Corporation | SF | - | - | - | 153 K |
| ZSR1200N8 | 12 V, Fixed positive local voltage regulator | Zetex-Semiconductor | SO | 8 | -55°C | 125°C | 421 K |
| ZSR1200N8 | 12 V, Fixed positive local voltage regulator | Zetex-Semiconductor | SO | 8 | -55°C | 125°C | 421 K |
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