Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
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IRFR320 | 3.1A, 400V, 1.800 Ohm, N-Channel Power MOSFETs | Intersil-Corporation | - | - | - | - | 55 K |
IRFR320 | HEXFET power MOSFET. VDSS = 400V, RDS(on) = 1.8 Ohm, ID = 3.1A | International-Rectifier | - | 3 | -55°C | 150°C | 177 K |
IRFR320 | HEXFET power MOSFET. VDSS = 400V, RDS(on) = 1.8 Ohm, ID = 3.1A | International-Rectifier | - | 3 | -55°C | 150°C | 177 K |
PBYR320CTD | Rectifier diodes Schottky barrier | Philips-Semiconductors | SOT428 | - | - | - | 48 K |
SR320 | Schottky barrier rectifier. Max recurrent peak reverse voltage 20V, max RMS voltage 14V, max DC blocking voltage 20V. Max average forward recftified current 3.0A at 9.5mm lead length. | distributor | - | 2 | -65°C | 125°C | 230 K |
SR320-TB | Reverse voltage: 20.00V; 3.0A schottky barrier rectifier | distributor | - | 2 | -65°C | 150°C | 47 K |
SR320-TB | Reverse voltage: 20.00V; 3.0A schottky barrier rectifier | distributor | - | 2 | -65°C | 150°C | 47 K |
STPR320 | ULTRA-FAST RECOVERY RECTIFIER DIODES | SGS-Thomson-Microelectronics | - | - | - | - | 54 K |
STPR320D | ULTRA FAST RECOVERY RECTIFIER DIODES | SGS-Thomson-Microelectronics | - | - | - | - | 84 K |
STPR320F | ULTRA FAST RECOVERY RECTIFIER DIODES | SGS-Thomson-Microelectronics | - | - | - | - | 84 K |
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