Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
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BCR512 | NPN silicon digital transistor | Infineon-formely-Siemens | - | 3 | - | - | 34 K |
GS-R51212 | 20 W TRIPLE OUTPUT STEP-DOWN SWITCHING REGULATOR | SGS-Thomson-Microelectronics | - | - | - | - | 102 K |
GS-R51212S | 31 W TRIPLE OUTPUT STEP-DOWN SWITCHING REGULATORS | SGS-Thomson-Microelectronics | - | - | - | - | 87 K |
HB54R5128KN-A75B | 512M; 133MHz DDR SDRAM SO-DIMM | distributor | - | 200 | - | - | 514 K |
MC-4R512FKE6D-653 | 512M-byte (256M-WORD x 16-bit) direct rambus DRAM RIMM module | distributor | BGA | 184 | - | - | 132 K |
MC-4R512FKE6D-745 | 512M-byte (256M-WORD x 16-bit) direct rambus DRAM RIMM module | distributor | BGA | 184 | - | - | 132 K |
MC-4R512FKE6D-845 | 512M-byte (256M-WORD x 16-bit) direct rambus DRAM RIMM module | distributor | BGA | 184 | - | - | 132 K |
MC-4R512FKE8D-653 | 512M-bit direct rambus DRAM RIMM module | distributor | BGA | 184 | - | - | 132 K |
MC-4R512FKE8D-745 | 512M-bit direct rambus DRAM RIMM module | distributor | BGA | 184 | - | - | 132 K |
MC-4R512FKE8D-845 | 512M-bit direct rambus DRAM RIMM module | distributor | BGA | 184 | - | - | 132 K |
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