| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| ABR810 | 1000 V, 8 A Avalanche bridge rectifier | distributor | BR | 4 | -50°C | 150°C | 18 K |
| BR810 | 8.0A single-phase silicon bridge rectifier | distributor | - | 4 | -55°C | 125°C | 383 K |
| BR810 | 1000 V, 8 A silicon bridge rectifier | distributor | BR10 | 4 | -40°C | 150°C | 17 K |
| BR810 | 1000 V, 8 A, Single-phase silicon bridge | distributor | BR | 4 | -55°C | 125°C | 47 K |
| BR810 | Single-phase silicon bridge rectifier. VRRM = 1000V, VRMS = 700V, VDC = 1000V. Current 8.0A. | distributor | - | 4 | -55°C | 125°C | 22 K |
| FBR810 | 1000 V, 8 A, fast recovery bridge rectifier | distributor | BR10 | 4 | -50°C | 150°C | 19 K |
| MBR8100 | 100 V, Schottky die | distributor | - | - | -65°C | 125°C | 10 M |
| MUR8100E | 8A, 1000V Ultrafast Diodes | Intersil-Corporation | - | - | - | - | 49 K |
| R810 | Output power: 100 mWatts; in-building cellular repeater | Watkins-Johnson-WJ-Company | - | - | -10°C | 45°C | 149 K |
| SMBR8100 | 100 V, Schottky die | distributor | - | - | -65°C | 125°C | 10 M |
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