| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| FRF250D | 23A, 200V, 0.115 Ohm, Rad Hard, N-Channel Power MOSFETs | Intersil-Corporation | - | - | - | - | 49 K |
| FRF250H | 23A, 200V, 0.115 Ohm, Rad Hard, N-Channel Power MOSFETs | Intersil-Corporation | - | - | - | - | 49 K |
| FRF250R | 23A, 200V, 0.115 Ohm, Rad Hard, N-Channel Power MOSFETs | Intersil-Corporation | - | - | - | - | 49 K |
| IRF250 | 25A and 30A, 150V and 200V, 0.085 and 0.120 Ohm, N-Channel Power MOSFETs | Intersil-Corporation | - | - | - | - | 57 K |
| IRF250 | 200V Vdss N-Channel FET (field effect transistor) | Semelab-Plc- | TO3 | - | - | - | 22 K |
| IRF250SMD | 200V Vdss N-Channel FET (field effect transistor) | Semelab-Plc- | SMD1 | - | - | - | 23 K |
| RF250 | Rx ASIC for CDMA, AMPS and PCS application | distributor | TQFP | 48 | -30°C | 80°C | 427 K |
| RF2504 | VCO/high-isolation buffer amplifier | RF-Micro-Devices-RFMD | SOIC | 8 | -40°C | 85°C | 92 K |
| RF2504PCBA | VCO/high-isolation buffer amplifier | RF-Micro-Devices-RFMD | SOIC | 8 | -40°C | 85°C | 92 K |
| RF2506PCBA | VHF/UHF VCO/high-isolation buffer amplifier | RF-Micro-Devices-RFMD | MSOP | 8 | -40°C | 85°C | 77 K |
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