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Electronic component:Description:Manuf.PackagePinsT°minT°maxDatasheet
IRF530Power MOSFET, 100V, 14AInternational-Rectifier-3-55°C175°C175 K
IRF530N-channel MOSFET, 100V, 14AMotorola-3-55°C150°C157 K
IRF530N-channel MOSFET, 100V, 14ASamsung-Electronic-3-55°C150°C354 K
IRF530N-channel MOSFET, 100V, 14ASGS-Thomson-Microelectronics-3-55°C150°C187 K
IRF530100 V, 14 A, power field effect transistordistributorTO3-55°C150°C481 K
IRF5305SPower MOSFET, 55V, 31AInternational-RectifierD2PAK3-55°C175°C171 K
IRF530AN-CHANNEL POWER MOSFETFairchild-Semiconductor----254 K
IRF530F1N-channel MOSFET, 100V, 9ASGS-Thomson-MicroelectronicsISOWATT2203-55°C150°C187 K
IRF530NLHEXFET power MOSFET. VDSS = 100V, RDS(on) = 0.11 Ohm, ID = 17AInternational-Rectifier-3-55°C175°C178 K
IRF530SPower MOSFET, 100V, 14AInternational-Rectifier-3-55°C175°C180 K
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