| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| IRFD110 | HEXFET power MOSFET. VDSS = 100V, RDS(on) = 0.54 Ohm, ID = 1.0 A | International-Rectifier | - | 4 | -55°C | 175°C | 174 K |
| IRFD120 | HEXFET power MOSFET. VDSS = 100V, RDS(on) = 0.27 Ohm, ID = 1.3 A | International-Rectifier | - | 4 | -55°C | 175°C | 176 K |
| RFD10P03LSM | 10A, 30V, 0.200 Ohm, Logic Level, P-Channel Power MOSFET | Fairchild-Semiconductor | - | - | - | - | 188 K |
| RFD12N06RLE | 17A, 60V, 0.071 Ohm, N-Channel, Logic Level UltraFET Power MOSFET | Fairchild-Semiconductor | - | - | - | - | 215 K |
| RFD14N05 | 14A, 50V, 0.100 Ohm, N-Channel Power MOSFETs | Fairchild-Semiconductor | - | - | - | - | 157 K |
| RFD14N05L | 14A, 50V, 0.100 Ohm, Logic Level, N-Channel Power MOSFETs | Fairchild-Semiconductor | - | - | - | - | 119 K |
| RFD14N05LSM | 14A, 50V, 0.100 Ohm, Logic Level, N-Channel Power MOSFETs | Fairchild-Semiconductor | - | - | - | - | 119 K |
| RFD16N02LSM | 16A, 20V, 0.022W , N-Channel Logic Level Power MOSFET | Intersil-Corporation | - | - | - | - | 74 K |
| RFD16N03LSM | Power dissipation 90 W Transistor polarity N Channel Current Id cont. 16 A Current Idm pulse 80 A Voltage Vgs th max. 2 V Voltage Vds max 30 V Resistance Rds on 0.022 R Temperature current 25 ?C | Fairchild-Semiconductor | - | - | - | - | 130 K |
| RFD16N05L | Power dissipation 60 W Transistor polarity N Channel Current Id cont. 16 A Current Idm pulse 45 A Voltage Vgs th max. 2 V (I-Pak) Voltage Vds max 50 V Resistance Rds on 0.047 R Temperature current 25 ?C | Fairchild-Semiconductor | - | - | - | - | 47 K |
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