Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
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APT100S20B | 200V, 100A high voltage schottky diode | Advanced-Power-Technology-APT | - | 2 | -55°C | 150°C | 32 K |
LS20BB-1T | Surface mountable illuminated switch. Non-illuminated type. Operating force 1.18N. Taping. | distributor | - | - | -30°C | 80°C | 212 K |
LS20BB-2T | Surface mountable illuminated switch. Non-illuminated type. Operating force 1.77N. Taping. | distributor | - | - | -30°C | 80°C | 212 K |
LS20BB-3T | Surface mountable illuminated switch. Non-illuminated type. Operating force 2.35N. Taping. | distributor | - | - | -30°C | 80°C | 212 K |
M2V64S20BTP-10 | 64M synchronous DRAM | Mitsubishi-Electric-Corporation-Semiconductor-Group | TSOP | 64 | 0°C | 70°C | 674 K |
M2V64S20BTP-10L | 64M synchronous DRAM | Mitsubishi-Electric-Corporation-Semiconductor-Group | TSOP | 64 | 0°C | 70°C | 674 K |
M2V64S20BTP-7L | 64M synchronous DRAM | Mitsubishi-Electric-Corporation-Semiconductor-Group | TSOP | 64 | 0°C | 70°C | 674 K |
M2V64S20BTP-7L | 64M synchronous DRAM | Mitsubishi-Electric-Corporation-Semiconductor-Group | TSOP | 64 | 0°C | 70°C | 674 K |
M2V64S20BTP-8 | 64M synchronous DRAM | Mitsubishi-Electric-Corporation-Semiconductor-Group | TSOP | 64 | 0°C | 70°C | 674 K |
M2V64S20BTP-8A | 64M synchronous DRAM | Mitsubishi-Electric-Corporation-Semiconductor-Group | TSOP | 64 | 0°C | 70°C | 674 K |
M2V64S20BTP-8L | 64M synchronous DRAM | Mitsubishi-Electric-Corporation-Semiconductor-Group | TSOP | 64 | 0°C | 70°C | 674 K |
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