| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| K4S641632D-TC/L1H | 1M x 16bit x 4 banks synchronous DRAM LVTTL. 64 Mbit SDRAM. Max freq. 100 MHz (CL=2), interface LVTTL. | Samsung-Electronic | TSOP (II) | 54 | 0°C | 70°C | 115 K |
| K4S641632D-TC/L1L | 1M x 16bit x 4 banks synchronous DRAM LVTTL. 64 Mbit SDRAM. Max freq. 100 MHz (CL=3), interface LVTTL. | Samsung-Electronic | TSOP (II) | 54 | 0°C | 70°C | 115 K |
| K4S641632D-TC/L80 | 1M x 16bit x 4 banks synchronous DRAM LVTTL. 64 Mbit SDRAM. Max freq. 125 MHz (CL=3), interface LVTTL. | Samsung-Electronic | TSOP (II) | 54 | 0°C | 70°C | 115 K |
| K4S641632F-TC1H | CMOS SDRAM 4 x 1,048,576 words by 16 bits, max freq. 100MHz, LVTTL interface | Samsung-Electronic | TSOP II | 54 | 0°C | 70°C | 133 K |
| K4S641632F-TC1H | CMOS SDRAM 4 x 1,048,576 words by 16 bits, max freq. 100MHz, LVTTL interface | Samsung-Electronic | TSOP II | 54 | 0°C | 70°C | 133 K |
| K4S641632F-TC1L | CMOS SDRAM 4 x 1,048,576 words by 16 bits, max freq. 100MHz, LVTTL interface | Samsung-Electronic | TSOP II | 54 | 0°C | 70°C | 133 K |
| K4S641632F-TC75 | CMOS SDRAM 4 x 1,048,576 words by 16 bits, max freq. 133MHz, LVTTL interface | Samsung-Electronic | TSOP II | 54 | 0°C | 70°C | 133 K |
| K4S641632F-TL1H | CMOS SDRAM 4 x 1,048,576 words by 16 bits, max freq. 100MHz, LVTTL interface | Samsung-Electronic | TSOP II | 54 | 0°C | 70°C | 133 K |
| K4S641632F-TL60 | CMOS SDRAM 4 x 1,048,576 words by 16 bits, max freq. 166MHz, LVTTL interface | Samsung-Electronic | TSOP II | 54 | 0°C | 70°C | 133 K |
| TC59S6416BFT-80 | 1,048,576-words x 4BANKS x 16-BITS synchronous dynamic RAM | Toshiba | TSOP | 54 | 0°C | 70°C | 2 M |
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