| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| KM416S8030BT-G/F10 | 2M x 16bit x 4 banks synchronous DRAM LVTTL. 128 Mbit SDRAM. Max freq. 66 MHz (CL=2&3) | Samsung-Electronic | TSOP (II) | 54 | 0°C | 70°C | 133 K |
| KM416S8030BT-G/F8 | 2M x 16bit x 4 banks synchronous DRAM LVTTL. 128 Mbit SDRAM. Max freq. 125 MHz (CL=3) | Samsung-Electronic | TSOP (II) | 54 | 0°C | 70°C | 133 K |
| KM416S8030BT-G/FA | 2M x 16bit x 4 banks synchronous DRAM LVTTL. 128 Mbit SDRAM. Max freq. 133 MHz (CL=3) | Samsung-Electronic | TSOP (II) | 54 | 0°C | 70°C | 133 K |
| KM416S8030BT-G/FH | 2M x 16bit x 4 banks synchronous DRAM LVTTL. 128 Mbit SDRAM. Max freq. 100 MHz (CL=2) | Samsung-Electronic | TSOP (II) | 54 | 0°C | 70°C | 133 K |
| KM416S8030BT-G/FL | 2M x 16bit x 4 banks synchronous DRAM LVTTL. 128 Mbit SDRAM. Max freq. 100 MHz (CL=3) | Samsung-Electronic | TSOP (II) | 54 | 0°C | 70°C | 133 K |
| KM416S8030T-G/F10 | 2M x 16bit x 4 banks synchronous DRAM LVTTL. Max freq. 100 MHz | Samsung-Electronic | TSOP (II) | 54 | 0°C | 70°C | 116 K |
| RS803 | 8.0 mA single-phase silicon bridge rectifier | distributor | KBU | 4 | -55°C | 150°C | 392 K |
| RS803 | 200 V, 8 A single phase bridge rectifier | distributor | RS | 4 | -65°C | 125°C | 31 K |
| RS803 | Single-phase silicon bridge rectifier. Max recurrent peak reverse voltage 200V, max RMS bridge input voltage 140V, max DC blocking voltage 200V. Max average forward rectified output current 8.0A at Tc=75degC | distributor | - | 4 | -55°C | 150°C | 26 K |
| RS803M | Single-phase silicon bridge rectifier. Max recurrent peak reverse voltage 200V, max RMS bridge input voltage 140V, max DC blocking voltage 200V. Max average forward rectified output current 8.0A at Tc=75degC | distributor | - | 4 | -55°C | 150°C | 29 K |
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