| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| KSA1201 | PNP Epitaxial Silicon Transistor | Fairchild-Semiconductor | - | - | - | - | 40 K |
| KSA1220 | PNP audio frequency power amplifier transistor | Fairchild-Semiconductor | - | 3 | -55°C | 150°C | 76 K |
| KSA1220A | PNP high frequency power amplifier transistor | Fairchild-Semiconductor | - | 3 | -55°C | 150°C | 76 K |
| KSA1241 | PNP Epitaxial Silicon Transistor | Fairchild-Semiconductor | - | - | - | - | 24 K |
| KSA1242 | PNP Epitaxial Silicon Transistor | Fairchild-Semiconductor | - | - | - | - | 40 K |
| KSA1243 | PNP Epitaxial Silicon Transistor | Fairchild-Semiconductor | - | - | - | - | 39 K |
| SA12 | 12.00V; 1mA ;500W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications | distributor | - | 2 | -55°C | 175°C | 601 K |
| SA120 | 120.00V; 1mA ;500W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications | distributor | - | 2 | -55°C | 175°C | 601 K |
| SA120A | 120.00V; 1mA ;500W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications | distributor | - | 2 | -55°C | 175°C | 601 K |
| SA12A | 12.00V; 1mA ;500W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications | distributor | - | 2 | -55°C | 175°C | 601 K |
| << [39] [40] [41] [42] [43] 44 [45] [46] |
|---|
