| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| SA24 | 24.00V; 1mA ;500W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications | distributor | - | 2 | -55°C | 175°C | 601 K |
| SA2410 | 2.45 GHz RF power amplifier and T/R switch | Philips-Semiconductors | LQFP | 32 | -40°C | 85°C | 45 K |
| SA2410 | 2.45 GHz RF power amplifier and T/R switch. | Philips-Semiconductors | - | 32 | -40°C | 85°C | 46 K |
| SA2420 | Low voltage RF transceiver - 2.45 GHz | Philips-Semiconductors | TSSOP | 24 | -40°C | 85°C | 131 K |
| SA2420DH | 2.45 GHz, low voltage RF transceiver | Philips-Semiconductors | TSSOP | 24 | -40°C | 85°C | 148 K |
| SA2420DH | Low voltage RF transceiver - 2.45 GHz. | Philips-Semiconductors | - | 24 | -40°C | 85°C | 505 K |
| SA2421DH | 2.45 GHz, low voltage RF transceiver | Philips-Semiconductors | TSSOP | 24 | -40°C | 85°C | 109 K |
| SA2421DH | 2.45 GHz low voltage RF transceiver. | Philips-Semiconductors | - | 24 | -40°C | 85°C | 118 K |
| SA24A | 24.00V; 1mA ;500W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications | distributor | - | 2 | -55°C | 175°C | 601 K |
| SA24C512 | 512kb, 64K x 8-bit memory; IIC serial EEPROM memory device | distributor | SOIC | 8 | - | - | 476 K |
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