| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| DSA26G | Diffused Junction Type Silicon Diode 2.6A Power Rectifier | SANYO-Electric-Co--Ltd- | - | - | - | - | 18 K |
| KSA2690 | NPN audio frequency power amplifier transistor | Fairchild-Semiconductor | - | 3 | -55°C | 150°C | 50 K |
| KSA2690A | NPN high frequency power amplifier transistor | Fairchild-Semiconductor | - | 3 | -55°C | 150°C | 50 K |
| MPSA26 | NPN Darlington transistor. | Philips-Semiconductors | SOT54 | 3 | -65°C | 150°C | 51 K |
| SA26 | 26.00V; 1mA ;500W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications | distributor | - | 2 | -55°C | 175°C | 601 K |
| SA26A | 26.00V; 1mA ;500W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications | distributor | - | 2 | -55°C | 175°C | 601 K |
| [1] [2] [3] [4] 5 |
|---|
