| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| 2SB1207 | Silicon PNP epitaxial planar type small signal transistor | Panasonic---Semiconductor-Company-of-Matsushita-Electronics-Corporation | - | - | - | - | 36 K |
| 2SB1218A | Silicon PNP epitaxial planar type small signal transistor | Panasonic---Semiconductor-Company-of-Matsushita-Electronics-Corporation | - | - | - | - | 48 K |
| 2SB1219 | Silicon PNP epitaxial planar type small signal transistor | Panasonic---Semiconductor-Company-of-Matsushita-Electronics-Corporation | - | - | - | - | 62 K |
| 2SB1257 | Transistor For General Purpose | Sanken-Electric-Co- | - | - | - | - | 26 K |
| 2SB1258 | Transistor For General Purpose | Sanken-Electric-Co- | - | - | - | - | 25 K |
| 2SB1259 | Transistor For General Purpose | Sanken-Electric-Co- | - | - | - | - | 26 K |
| 2SB1261 | Silicon power transistor | NEC-Electronics-Inc- | - | - | - | - | 295 K |
| 2SB1261-Z | Silicon power transistor | NEC-Electronics-Inc- | - | - | - | - | 295 K |
| SB120 | 1.0 Ampere Schottky Barrier Rectifiers | Fairchild-Semiconductor | - | - | - | - | 36 K |
| SB120-18 | Shottky barrier diode, 180V/12A rectifier | SANYO-Electric-Co--Ltd- | 1160 | 3 | - | - | 80 K |
| [1] [2] [3] [4] [5] [6] 7 [8] [9] [10] |
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