| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| 2SC2233 | 4Ampere NPN silicon power transistor | distributor | - | 3 | -55°C | 150°C | 120 K |
| 2SC2233 | NPN silicon plastic power transistor. Designed for use in B/W TV horizontal deflection output. Vcbo =200V, DC current gain: 20 @ Ic = 4A. Pd = 40W. | distributor | - | 3 | -55°C | 150°C | 46 K |
| 2SC2233 | NPN epitaxial silicon transistor. Low frequency power amplifier | Wing-Shing-Electronic-Co----manufacturer-of-power-semiconductors | - | 3 | - | - | 65 K |
| 2SC2237 | Silicon NPN epitaxial planar type transistor | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 5 | - | - | 131 K |
| 2SC2275 | NPN epitaxial silicon transistor. Low frequency power amplifier | Wing-Shing-Electronic-Co----manufacturer-of-power-semiconductors | - | 3 | - | - | 70 K |
| HSC2228Y | Emitter to base voltage:5V 50mA NPN epitaxial planar transistor for high voltage amplifier applications | distributor | - | 3 | - | - | 34 K |
| LSC2210-FP | 14 pin DFB laser module with cooler | distributor | DIL | 14 | -20°C | 65°C | 130 K |
| LSC2210-ST | 14 pin DFB laser module with cooler | distributor | DIL | 14 | -20°C | 65°C | 130 K |
| MSC2295-BT1 | 30 V, NPN RF amplifier transistor surface mount | distributor | - | 3 | - | - | 38 K |
| MSC2295-CT1 | 30 V, NPN RF amplifier transistor surface mount | distributor | - | 3 | - | - | 38 K |
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