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Electronic component:Description:Manuf.PackagePinsT°minT°maxDatasheet
GSH10A10B100 V, diodedistributorTO3-40°C150°C29 K
HSH1000CEOLamp for photolithography. Iding mode power 700 watts, current 16 amps(DC), voltage 44 volts(DC). Flash mode power 1000 watts, current 21.3 amps(DC), voltage 47 volts(DC). Temperature(at base) 220degC(max).distributor-2--45 K
HSH1000KSLamp for photolithography. Power 1000 watts, current 28 amps(DC), voltage 38 volts(DC). Temperature(at base) 220degC(max).distributor-2--45 K
HSH1000NEOLamp for photolithography. Iding mode power 700 watts, current 16 amps(DC), voltage 44 volts(DC). Flash mode power 1000 watts, current 21.3 amps(DC), voltage 47 volts(DC). Temperature(at base) 220degC(max).distributor-2--46 K
HSH1000UEOLamp for photolithography. Iding mode power 700 watts, current 16 amps(DC), voltage 44 volts(DC). Flash mode power 1000 watts, current 21.3 amps(DC), voltage 47 volts(DC). Temperature(at base) 220degC(max).distributor-2--47 K
HSH1002CEOLamp for photolithography. Iding mode power 700 watts, current 16 amps(DC), voltage 44 volts(DC). Flash mode power 1000 watts, current 21.3 amps(DC), voltage 47 volts(DC). Temperature(at base) 220degC(max).distributor-2--45 K
HSH1002GEOLamp for photolithography. Iding mode power 700 watts, current 16 amps(DC), voltage 44 volts(DC). Flash mode power 1000 watts, current 21.3 amps(DC), voltage 47 volts(DC). Temperature(at base) 220degC(max).distributor-2--47 K
HSH1002NEOLamp for photolithography. Iding mode power 700 watts, current 16 amps(DC), voltage 44 volts(DC). Flash mode power 1000 watts, current 21.3 amps(DC), voltage 47 volts(DC). Temperature(at base) 220degC(max).distributor-2--46 K
MPSH10PNPN silicon planar RF transistorZetex-Semiconductor-3-55°C200°C47 K
MPSH10PNPN silicon planar RF transistorZetex-Semiconductor-3-55°C200°C47 K
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