Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
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BSH101 | 60 V, N-channel enhancement mode MOS transistor | Philips-Semiconductors | SOT | 3 | -55°C | 150°C | 643 K |
BSH102 | 60 V, N-channel enhancement mode MOS transistor | Philips-Semiconductors | SOT | 3 | -55°C | 150°C | 78 K |
BSH104 | 12 V, N-channel enhancement mode MOS transistor | Philips-Semiconductors | SOT | 3 | -55°C | 150°C | 51 K |
BSH104 | 12 V, N-channel enhancement mode MOS transistor | Philips-Semiconductors | SOT | 3 | -55°C | 150°C | 51 K |
BSH105 | 20 V, N-channel enhancement mode MOS transistor | Philips-Semiconductors | SOT | 3 | -55°C | 150°C | 110 K |
HMPSH10 | Emitter to base voltage:3V 50mA NPN epitaxial planar transistor for use in VHF & UHF oscillators and VHF mixer in tuner of a TV receiver | distributor | - | 3 | - | - | 38 K |
HSH1002NILO | Lamp for photolithography. Iding mode power 700 watts, current 27 amps(DC), voltage 26 volts(DC). Flash mode power 1000 watts, current 36 amps(DC), voltage 28 volts(DC). Temperature(at base) 220degC(max). | distributor | - | 2 | - | - | 46 K |
HSH1002UEO | Lamp for photolithography. Iding mode power 700 watts, current 16 amps(DC), voltage 44 volts(DC). Flash mode power 1000 watts, current 21.3 amps(DC), voltage 47 volts(DC). Temperature(at base) 220degC(max). | distributor | - | 2 | - | - | 46 K |
HSH1003GILO | Lamp for photolithography. Iding mode power 700 watts, current 27 amps(DC), voltage 26 volts(DC). Flash mode power 1000 watts, current 36 amps(DC), voltage 28 volts(DC). Temperature(at base) 220degC(max). | distributor | - | 2 | - | - | 47 K |
HSH1003GILOS | Lamp for photolithography. Iding mode power 700 watts, current 27 amps(DC), voltage 26 volts(DC). Flash mode power 1000 watts, current 36 amps(DC), voltage 28 volts(DC). Temperature(at base) 220degC(max). | distributor | - | 2 | - | - | 47 K |
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