Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
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ispLSI1016EA-100LJ44 | In-system programmable high density PLD, 100 MHz, 10ns, low power | Lattice-Semiconductor-Corporation | PLCC | 44 | 0°C | 70°C | 162 K |
ispLSI1016EA-100LT44 | In-system programmable high density PLD, 100 MHz, 10ns, low power | Lattice-Semiconductor-Corporation | TQFP | 44 | 0°C | 70°C | 162 K |
ispLSI1016EA-125LJ44 | In-system programmable high density PLD, 125 MHz, 7.5ns, low power | Lattice-Semiconductor-Corporation | PLCC | 44 | 0°C | 70°C | 162 K |
ispLSI1016EA-200LJ44 | In-system programmable high density PLD, 200 MHz, 4.5ns, low power | Lattice-Semiconductor-Corporation | PLCC | 44 | 0°C | 70°C | 162 K |
ispLSI1016EA-200LT44 | In-system programmable high density PLD, 200 MHz, 4.5ns, low power | Lattice-Semiconductor-Corporation | TQFP | 44 | 0°C | 70°C | 162 K |
ispLSI1032E-125LT | In-system programmable high density PLD, 7.5ns | Lattice-Semiconductor-Corporation | TQFP | 100 | 0°C | 70°C | 164 K |
ISPLSI1048EA-100LQ128 | 100 MHz in-system prommable high density PLD | Lattice-Semiconductor-Corporation | PQFP | 128 | 0°C | 70°C | 182 K |
ISPLSI1048EA-100LT128 | 100 MHz in-system prommable high density PLD | Lattice-Semiconductor-Corporation | TQFP | 128 | 0°C | 70°C | 182 K |
ISPLSI1048EA-125LQ128 | 125 MHz in-system prommable high density PLD | Lattice-Semiconductor-Corporation | PQFP | 128 | 0°C | 70°C | 182 K |
SSI10N60B | 600V N-Channel MOSFET | Fairchild-Semiconductor | - | - | - | - | 686 K |
[1] 2 [3] [4] [5] [6] |
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