Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
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ispLSI1032E-100LJ | In-system programmable high density PLD, 10ns | Lattice-Semiconductor-Corporation | PLCC | 84 | 0°C | 70°C | 164 K |
ispLSI1032E-100LT | In-system programmable high density PLD, 10ns | Lattice-Semiconductor-Corporation | TQFP | 100 | 0°C | 70°C | 164 K |
ispLSI1032E-70LJ | In-system programmable high density PLD, 15ns | Lattice-Semiconductor-Corporation | PLCC | 84 | 0°C | 70°C | 164 K |
ispLSI1032E-70LJI | In-system programmable high density PLD, 15ns | Lattice-Semiconductor-Corporation | PLCC | 84 | -40°C | 85°C | 164 K |
ispLSI1032E-70LJI | In-system programmable high density PLD, 15ns | Lattice-Semiconductor-Corporation | PLCC | 84 | -40°C | 85°C | 164 K |
ispLSI1032E-70LT | In-system programmable high density PLD, 15ns | Lattice-Semiconductor-Corporation | TQFP | 100 | 0°C | 70°C | 164 K |
ispLSI1032E-70LTI | In-system programmable high density PLD, 15ns | Lattice-Semiconductor-Corporation | TQFP | 100 | -40°C | 85°C | 164 K |
ispLSI1032E-80LJ | In-system programmable high density PLD, 12ns | Lattice-Semiconductor-Corporation | PLCC | 84 | 0°C | 70°C | 164 K |
ispLSI1032E-90LJ | In-system programmable high density PLD, 10ns | Lattice-Semiconductor-Corporation | PLCC | 84 | 0°C | 70°C | 164 K |
ispLSI1032E-90LT | In-system programmable high density PLD, 10ns | Lattice-Semiconductor-Corporation | TQFP | 100 | 0°C | 70°C | 164 K |
[1] [2] 3 [4] [5] [6] |
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