| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| 2SJ201 | Silicon P channel field effect transistor for high power amplifier applications | Toshiba | - | 3 | -55°C | 150°C | 182 K |
| 2SJ202-T1 | MOS field effect transistor | NEC-Electronics-Inc- | - | - | - | - | 406 K |
| 2SJ202-T2 | MOS field effect transistor | NEC-Electronics-Inc- | - | - | - | - | 406 K |
| 2SJ204-L | MOS field effect transistor | NEC-Electronics-Inc- | - | - | - | - | 323 K |
| 2SJ204-T1B | MOS field effect transistor | NEC-Electronics-Inc- | - | - | - | - | 323 K |
| 2SJ204-T2B | MOS field effect transistor | NEC-Electronics-Inc- | - | - | - | - | 323 K |
| 2SJ205 | MOS field effect transistor | NEC-Electronics-Inc- | - | - | - | - | 307 K |
| 2SJ205-T1 | MOS field effect transistor | NEC-Electronics-Inc- | - | - | - | - | 307 K |
| 2SJ205-T2 | MOS field effect transistor | NEC-Electronics-Inc- | - | - | - | - | 307 K |
| 2SJ206 | P-channel MOS FET | NEC-Electronics-Inc- | - | - | - | - | 294 K |
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