Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
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BSP20AT1 | NPN silicon epitaxial transistor | Motorola | - | 4 | - | - | 119 K |
CSP20C04 | 20AMPS schottky barrier rectifier | Chino-Excel-Technology-Corporation | - | 3 | -65°C | 125°C | 287 K |
SP200UF | 20000 V rectifier stack 0.5 A forward current, 70 ns recovery time | distributor | - | 2 | -55°C | 150°C | 71 K |
SP201 | 4 Watt, silicon gate enhancement mode RF power VDMOS transistor | distributor | - | 2 | -65°C | 150°C | 34 K |
SP202 | 8 Watt, silicon gate enhancement mode RF power VDMOS transistor | distributor | - | 2 | -65°C | 150°C | 36 K |
SP203 | 12 Watt, silicon gate enhancement mode RF power VDMOS transistor | distributor | - | 2 | -65°C | 150°C | 34 K |
SP204 | 15 Watt, silicon gate enhancement mode RF power VDMOS transistor | distributor | - | 2 | -65°C | 150°C | 34 K |
SP208EHEA | High speed +5V high performance RS232 transceivers | Sipex-Corporation | SSOP | 24 | -40°C | 85°C | 204 K |
SP208EHEP | High speed +5V high performance RS232 transceivers | Sipex-Corporation | DIP | 24 | -40°C | 85°C | 204 K |
SP208EHET | High speed +5V high performance RS232 transceivers | Sipex-Corporation | SOIC | 24 | -40°C | 85°C | 204 K |
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