Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
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1SS133 | Switching diode | ROHM | - | 2 | - | - | 54 K |
BSS138 | 50V N-channel enhancement mode field effect transistor | Chino-Excel-Technology-Corporation | - | 3 | -55°C | 150°C | 481 K |
BSS138 | N-channel enhancement mode vertical DMOS FET | Zetex-Semiconductor | SOT | 3 | -55°C | 150°C | 58 K |
BSS138 | N-channel enhancement mode vertical DMOS FET | Zetex-Semiconductor | SOT | 3 | -55°C | 150°C | 58 K |
SS13 | 1.0 mA surface mount schottky barrier rectifier | distributor | - | 2 | -65°C | 125°C | 425 K |
SS13 | Surface Mount Schottky Barrier Rectifier | General-Semiconductor | - | - | - | - | 80 K |
SS13 | Surface mount schottky barrier rectifier. Max reccurent peak reverse voltage 30V. Max RMS bridge input voltage 21V. Max DC blocking voltage 30V. | Wing-Shing-Electronic-Co----manufacturer-of-power-semiconductors | - | 2 | -65°C | 125°C | 246 K |
SS13-T1 | Reverse voltage: 30.00V; 1.0A surface mount schottky barrier rectifier | distributor | SMA | 2 | -65°C | 125°C | 42 K |
SS13-T1 | Reverse voltage: 30.00V; 1.0A surface mount schottky barrier rectifier | distributor | SMA | 2 | -65°C | 125°C | 42 K |
SS13-T3 | Reverse voltage: 30.00V; 1.0A surface mount schottky barrier rectifier | distributor | SMA | 2 | -65°C | 125°C | 42 K |
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