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Electronic component:Description:Manuf.PackagePinsT°minT°maxDatasheet
STP6N50Power dissipation 100 W Transistor polarity N Channel Current Id cont. 6 A Current Idm pulse 24 A Pitch lead 2.54 mm Voltage Vds max 500 V Resistance Rds on 1.1 R Temperature current 25 ?CSGS-Thomson-Microelectronics----201 K
STP6N60FIN-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORSSGS-Thomson-Microelectronics----151 K
STP6NA60FPN-CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTORSGS-Thomson-Microelectronics----50 K
STP6NA80N-CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTORSSGS-Thomson-Microelectronics----202 K
STP6NA80FIN-CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTORSSGS-Thomson-Microelectronics----202 K
STP6NB80N-CHANNEL 800V - 1.6 OHM - 5.7A - TO-220/TO-220FPSGS-Thomson-Microelectronics----44 K
STP6NB80FPN-CHANNEL 800V - 1.6 OHM - 5.7A - TO-220/TO-220FPSGS-Thomson-Microelectronics----44 K
STP6NB90N-CHANNEL 900V - 1.7 OHM - 5.8A - TO-220/TO-220FP POWERMESH MOSFETSGS-Thomson-Microelectronics----109 K
STP6NB90FPN-CHANNEL 900V - 1.7 OHM - 5.8A - TO-220/TO-220FP POWERMESH MOSFETSGS-Thomson-Microelectronics----109 K
STP6NC80ZN-CHANNEL 800V 1.5OHM 5.4A TO-220/TO-220FP/D2PAK/I2PAK/ ZENER-PROTECTED POWERMESH III MOSFETSGS-Thomson-Microelectronics----511 K
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