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Electronic component:Description:Manuf.PackagePinsT°minT°maxDatasheet
K6T1008C2E-DB55128Kx8 bit, 55ns low low power CMOS static RAMSamsung-ElectronicDIP320°C70°C190 K
K6T1008C2E-DB70128Kx8 bit, 70ns low low power CMOS static RAMSamsung-ElectronicDIP320°C70°C190 K
K6T1008C2E-DL55128Kx8 bit, 55ns low power CMOS static RAMSamsung-ElectronicDIP320°C70°C190 K
K6T1008C2E-DL70128Kx8 bit, 70ns low power CMOS static RAMSamsung-ElectronicDIP320°C70°C190 K
K6T1008C2E-GB55128Kx8 bit, 55ns low low power CMOS static RAMSamsung-ElectronicSOP320°C70°C190 K
K6T1008C2E-GB70128Kx8 bit, 70ns low low power CMOS static RAMSamsung-ElectronicSOP320°C70°C190 K
K6T1008C2E-GL55128Kx8 bit, 55ns low power CMOS static RAMSamsung-ElectronicSOP320°C70°C190 K
K6T1008C2E-GL70128Kx8 bit, 70ns low power CMOS static RAMSamsung-ElectronicSOP320°C70°C190 K
K6T1008C2E-TB55128Kx8 bit, 55ns low low power CMOS static RAMSamsung-ElectronicTSOP320°C70°C190 K
LT1008Picoamp Input Current, Microvolt Offset, Low Noise Op AmpLinear-Technology----946 K
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