Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
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APT10086BLC | 1000V, 13A power MOS VI transistor | Advanced-Power-Technology-APT | - | 3 | -55°C | 150°C | 35 K |
APT10086BVFR | 1000V, 13A power MOS V transistor | Advanced-Power-Technology-APT | - | 3 | -55°C | 150°C | 68 K |
APT10086BVR | 1000V, 13A power MOS V transistor | Advanced-Power-Technology-APT | - | 3 | -55°C | 150°C | 66 K |
APT10086SLC | 1000V, 13A power MOS VI transistor | Advanced-Power-Technology-APT | D3PAK | 3 | -55°C | 150°C | 35 K |
APT10086SVR | 1000V, 13A power MOS V transistor | Advanced-Power-Technology-APT | D3PAK | 3 | -55°C | 150°C | 69 K |
APT10088HVR | 1000V, 11A power MOS V transistor | Advanced-Power-Technology-APT | - | 3 | -55°C | 150°C | 65 K |
K6T1008C2E-RF55 | 128Kx8 bit, 55ns low low power CMOS static RAM | Samsung-Electronic | TSOP | 32 | -40°C | 85°C | 190 K |
LT1008CH | Picoamp input current, microvolt offset, low noise operational amplifier | Linear-Technology | - | 8 | 0°C | 70°C | 306 K |
LT1008MH | Picoamp input current, microvolt offset, low noise operational amplifier | Linear-Technology | - | 8 | -55°C | 125°C | 306 K |
LT1008MH | Picoamp input current, microvolt offset, low noise operational amplifier | Linear-Technology | - | 8 | -55°C | 125°C | 306 K |
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