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Electronic component:Description:Manuf.PackagePinsT°minT°maxDatasheet
APT10086BLC1000V, 13A power MOS VI transistorAdvanced-Power-Technology-APT-3-55°C150°C35 K
APT10086BVFR1000V, 13A power MOS V transistorAdvanced-Power-Technology-APT-3-55°C150°C68 K
APT10086BVR1000V, 13A power MOS V transistorAdvanced-Power-Technology-APT-3-55°C150°C66 K
APT10086SLC1000V, 13A power MOS VI transistorAdvanced-Power-Technology-APTD3PAK3-55°C150°C35 K
APT10086SVR1000V, 13A power MOS V transistorAdvanced-Power-Technology-APTD3PAK3-55°C150°C69 K
APT10088HVR1000V, 11A power MOS V transistorAdvanced-Power-Technology-APT-3-55°C150°C65 K
K6T1008C2E-RF55128Kx8 bit, 55ns low low power CMOS static RAMSamsung-ElectronicTSOP32-40°C85°C190 K
LT1008CHPicoamp input current, microvolt offset, low noise operational amplifierLinear-Technology-80°C70°C306 K
LT1008MHPicoamp input current, microvolt offset, low noise operational amplifierLinear-Technology-8-55°C125°C306 K
LT1008MHPicoamp input current, microvolt offset, low noise operational amplifierLinear-Technology-8-55°C125°C306 K
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