| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| IDT70T631S010BCI | High-speed 2.5V 256 x 18 asynchronous dual-port static RAM, 10ns | Integrated-Device-Technology-Inc- | BGA | 256 | -40°C | 85°C | 342 K |
| IDT70T631S010BF | High-speed 2.5V 256 x 18 asynchronous dual-port static RAM, 10ns | Integrated-Device-Technology-Inc- | fpBGA | 208 | 0°C | 70°C | 342 K |
| IDT70T631S010BFI | High-speed 2.5V 256 x 18 asynchronous dual-port static RAM, 10ns | Integrated-Device-Technology-Inc- | fpBGA | 208 | -40°C | 85°C | 342 K |
| IDT70T631S012BC | High-speed 2.5V 256 x 18 asynchronous dual-port static RAM, 12ns | Integrated-Device-Technology-Inc- | BGA | 256 | 0°C | 70°C | 342 K |
| IDT70T631S012BCI | High-speed 2.5V 256 x 18 asynchronous dual-port static RAM, 12ns | Integrated-Device-Technology-Inc- | BGA | 256 | -40°C | 85°C | 342 K |
| IDT70T631S012BF | High-speed 2.5V 256 x 18 asynchronous dual-port static RAM, 12ns | Integrated-Device-Technology-Inc- | fpBGA | 208 | 0°C | 70°C | 342 K |
| IDT70T631S012BFI | High-speed 2.5V 256 x 18 asynchronous dual-port static RAM, 12ns | Integrated-Device-Technology-Inc- | fpBGA | 208 | -40°C | 85°C | 342 K |
| IDT70T631S012DD | High-speed 2.5V 256 x 18 asynchronous dual-port static RAM, 12ns | Integrated-Device-Technology-Inc- | TQFP | 144 | 0°C | 70°C | 342 K |
| IDT70T631S015BF | High-speed 2.5V 256 x 18 asynchronous dual-port static RAM, 15ns | Integrated-Device-Technology-Inc- | fpBGA | 208 | 0°C | 70°C | 342 K |
| IDT70T631S015DD | High-speed 2.5V 256 x 18 asynchronous dual-port static RAM, 15ns | Integrated-Device-Technology-Inc- | TQFP | 144 | 0°C | 70°C | 342 K |
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