| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| DTB114EK | Digital PNP transistor (with resistors) | ROHM | SMT3 | 3 | - | - | 60 K |
| DTB114ES | Digital PNP transistor (with resistors) | ROHM | SPT | 3 | - | - | 60 K |
| DTB114GK | Digital PNP transistor (with resistors) | ROHM | SMT3 | 3 | - | - | 41 K |
| DTB114TK | Digital PNP transistor (with resistor) | ROHM | SMT3 | 3 | - | - | 41 K |
| TB1100H | Rated repetitive off-state voltage:90 ,surface mount thyristor surge protective device | distributor | SMB | 2 | -40°C | 150°C | 46 K |
| TB1100L | 90V; 30A Bi-directional surface mount thyristor surge protective device. Oxide-glass passivated junction | distributor | SMB | 2 | -40°C | 150°C | 190 K |
| TB1100L | Rated repetitive off-state voltage:90 ,surface mount thyristor surge protective device | distributor | SMB | 2 | -40°C | 150°C | 47 K |
| TB1100M | Rated repetitive off-state voltage:90 ,surface mount thyristor surge protective device | distributor | SMB | 2 | -40°C | 150°C | 47 K |
| VTB1112 | Process photodiode. Isc = 60 microA, Voc = 490 mV at H = 100 fc, 2850 K. | distributor | - | 2 | -40°C | 110°C | 29 K |
| VTB1113 | Process photodiode. Isc = 60 microA, Voc = 490 mV at H = 100 fc, 2850 K. | distributor | - | 2 | -40°C | 110°C | 29 K |
| [1] 2 [3] |
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