| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| ICTE-12 | Transient Voltage Suppressor | Microsemi-Corporation | - | - | - | - | 71 K |
| ICTE-12 | Transient Voltage Suppressor | Microsemi-Corporation | - | - | - | - | 71 K |
| ICTE-15C | Transient Voltage Suppressor | Microsemi-Corporation | - | - | - | - | 71 K |
| ICTE-18 | Transient Voltage Suppressor | Microsemi-Corporation | - | - | - | - | 71 K |
| MBM29DL161TE-12PBT | Flash memory CMOS 16M (2M x 8/1 x 16)bit dual operation | Fujitsu-Microelectronis | plastic FBGA | 48 | -40°C | 85°C | 1 M |
| MBM29DL161TE-12TN | Flash memory CMOS 16M (2M x 8/1 x 16)bit dual operation | Fujitsu-Microelectronis | - | 48 | -40°C | 85°C | 1 M |
| MBM29DL161TE-12TR | Flash memory CMOS 16M (2M x 8/1 x 16)bit dual operation | Fujitsu-Microelectronis | - | 48 | -40°C | 85°C | 1 M |
| MBM29DL162TE-12PBT | Flash memory CMOS 16M (2M x 8/1 x 16)bit dual operation | Fujitsu-Microelectronis | plastic FBGA | 48 | -40°C | 85°C | 1 M |
| MBM29DL162TE-12TR | Flash memory CMOS 16M (2M x 8/1 x 16)bit dual operation | Fujitsu-Microelectronis | - | 48 | -40°C | 85°C | 1 M |
| MBM29DL163TE-12PN | Flash memory CMOS 16M (2M x 8/1 x 16)bit dual operation | Fujitsu-Microelectronis | - | 48 | -40°C | 85°C | 1 M |
| [1] [2] 3 [4] [5] [6] |
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