| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| ICTE-10 | 10.00V; 90A ;1500W peak pulse power; glass passivated junction transient voltage suppressor | distributor | - | 2 | -55°C | 175°C | 139 K |
| ICTE-12 | 12.00V; 70A ;1500W peak pulse power; glass passivated junction transient voltage suppressor | distributor | - | 2 | -55°C | 175°C | 139 K |
| ICTE-15 | 15.00V; 60A ;1500W peak pulse power; glass passivated junction transient voltage suppressor | distributor | - | 2 | -55°C | 175°C | 139 K |
| KM681000BLTE-10 | 128K x 8 bit CMOS static RAM, 100ns, low power | Samsung-Electronic | TSOP F | 32 | -25°C | 85°C | 192 K |
| KM681000BLTE-10L | 128K x 8 bit CMOS static RAM, 100ns, low low power | Samsung-Electronic | TSOP F | 32 | -25°C | 85°C | 192 K |
| MBM29DL163TE-12PBT | Flash memory CMOS 16M (2M x 8/1 x 16)bit dual operation | Fujitsu-Microelectronis | plastic FBGA | 48 | -40°C | 85°C | 1 M |
| MBM29DL163TE-12TR | Flash memory CMOS 16M (2M x 8/1 x 16)bit dual operation | Fujitsu-Microelectronis | - | 48 | -40°C | 85°C | 1 M |
| MBM29DL164TE-12PBT | Flash memory CMOS 16M (2M x 8/1 x 16)bit dual operation | Fujitsu-Microelectronis | plastic FBGA | 48 | -40°C | 85°C | 1 M |
| MBM29DL164TE-12TN | Flash memory CMOS 16M (2M x 8/1 x 16)bit dual operation | Fujitsu-Microelectronis | - | 48 | -40°C | 85°C | 1 M |
| MBM29DL164TE-12TR | Flash memory CMOS 16M (2M x 8/1 x 16)bit dual operation | Fujitsu-Microelectronis | - | 48 | -40°C | 85°C | 1 M |
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