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Electronic component:Description:Manuf.PackagePinsT°minT°maxDatasheet
HTIP31C5V 3A NPN epiataxial planar transistor for use in general purpose amplifier and switching applicationsdistributor-3--33 K
HTIP32C5V 3A PNP epiataxial planar transistor for use in general purpose amplifier and switching applicationsdistributor-3--32 K
TIP31CFGeneral Purpose TransistorKorea-Electronics-Co--Ltd-----356 K
TIP32CPNP, silicon plastic power transistor. Designed for use in general-purpose switching and amplifier application. Vceo = 100Vdc, Vcb = 100Vdc, Veb = 5Vdc, Ic = 3Adc, PD = 40W.distributor-3-65°C150°C47 K
TIP35ANPN, silicon high-power transistor. Designed for use in general-purpose switching and power amplifier applications. Vceo = 60Vdc, Vcb = 60Vdc, Veb = 5Vdc, Ic = 25Adc, PD = 125W.distributor-3-65°C150°C47 K
TIP35BNPN, silicon high-power transistor. Designed for use in general-purpose switching and power amplifier applications. Vceo = 80Vdc, Vcb = 80Vdc, Veb = 5Vdc, Ic = 25Adc, PD = 125W.distributor-3-65°C150°C47 K
TIP35CNPN, silicon high-power transistor. Designed for use in general-purpose switching and power amplifier applications. Vceo = 100Vdc, Vcb = 100Vdc, Veb = 5Vdc, Ic = 25Adc, PD = 125W.distributor-3-65°C150°C47 K
TIP36APNP, silicon high-power transistor. Designed for use in general-purpose switching and power amplifier applications. Vceo = 60Vdc, Vcb = 60Vdc, Veb = 5Vdc, Ic = 25Adc, PD = 125W.distributor-3-65°C150°C47 K
TIP36BPNP, silicon high-power transistor. Designed for use in general-purpose switching and power amplifier applications. Vceo = 80Vdc, Vcb = 80Vdc, Veb = 5Vdc, Ic = 25Adc, PD = 125W.distributor-3-65°C150°C47 K
TIP36CPNP, silicon high-power transistor. Designed for use in general-purpose switching and power amplifier applications. Vceo = 100Vdc, Vcb = 100Vdc, Veb = 5Vdc, Ic = 25Adc, PD = 125W.distributor-3-65°C150°C47 K
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