| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| 28C256ATM-1 | High speed 120 ns CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM | distributor | TSOP | 28 | -55°C | 125°C | 41 K |
| 28C256ATM-1 | High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 120 ns. | distributor | TSOP | 28 | -55°C | 125°C | 41 K |
| 28C64ATM-1 | High speed 120 ns CMOS 64 K electrically erasable programmable ROM 8K x 8 BIT EEPROM | distributor | TSOP | 28 | -55°C | 125°C | 42 K |
| 28C64ATM-1 | High speed CMOS. 64K electrically erasable programmable ROM. 8K x 8 bit EEPROM. Access time 120 ns. | distributor | TSOP | 28 | -55°C | 125°C | 42 K |
| 29C010TM-1 | High speed 120 ns CMOS 1 Megabit programmable and erasable ROM 128K x 8 BIT flash PEROM | distributor | TSOP | 32 | -55°C | 125°C | 52 K |
| 29C021TM-1 | High speed 150 ns CMOS 2 Megabit programmable and erasable ROM 256K x 8 BIT flash PEROM | distributor | TSOP | 32 | -55°C | 125°C | 54 K |
| A29L160TM-120 | 120ns; active read:9mA; programm/erase:20mA 0.2uA 2M x 8bit/1M x 16bit CMOS 3.0V-only boot sector flash memory | distributor | SOP | 32 | 0°C | 70°C | 433 K |
| A29L160TM-120 | 120ns; 9mA 2M x 8bit/1M x 16bit CMOS 3.0V-only boot sector flash memory | distributor | SOP | 44 | 0°C | 70°C | 429 K |
| HM62V256LTM-10 | 32,768-word x 8-bit low voltage operation CMOS static RAM, 100ns | distributor | TSOP | 28 | 0°C | 70°C | 111 K |
| HM62V256LTM-10SL | 32,768-word x 8-bit low voltage operation CMOS static RAM, 100ns | distributor | TSOP | 28 | 0°C | 70°C | 111 K |
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