| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| HGTP20N35G3VL | 350V, 20A Ignition IGBT | Intersil-Corporation | - | - | - | - | 106 K |
| HGTP20N60A4 | 600V, SMPS Series N-Channel IGBTs | Intersil-Corporation | - | - | - | - | 354 K |
| HGTP20N60A4 | 600V, SMPS Series N-Channel IGBTs | Intersil-Corporation | - | - | - | - | 354 K |
| HGTP20N60B3 | 40A, 600V, UFS Series N-Channel IGBTs | Intersil-Corporation | - | - | - | - | 138 K |
| HGTP20N60C3 | 45A, 600V, UFS Series N-Channel IGBT | Intersil-Corporation | - | - | - | - | 81 K |
| HGTP20N60C3R | TRANSISTOR IGBT TO-262 | Fairchild-Semiconductor | - | - | - | - | 107 K |
| MTP20N06V | TMOS V power field effect transistor | Motorola | - | 4 | -55°C | 175°C | 209 K |
| MTP20N20E | TMOS E-FET power field effect transistor | Motorola | - | 4 | -55°C | 150°C | 203 K |
| STP20N10L | N-CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTORS | SGS-Thomson-Microelectronics | - | - | - | - | 203 K |
| STP20N10LFI | N-CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTORS | SGS-Thomson-Microelectronics | - | - | - | - | 203 K |
| [1] 2 [3] |
|---|
