Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
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WEDPNF8M721V-1010BM | 100MHz SDRAM/100ns flash; 3.3V power supply; 8M x 72 synchronous DRAM + 8Mb flash mixed module multi-chip package | distributor | PBGA | 275 | -55°C | 125°C | 1 M |
WEDPNF8M721V-1012BM | 100MHz SDRAM/120ns flash; 3.3V power supply; 8M x 72 synchronous DRAM + 8Mb flash mixed module multi-chip package | distributor | PBGA | 275 | -55°C | 125°C | 1 M |
WS1M8V-100CC | 100ns; 3.3V power supply; 2 x 512K x 8 dualithic module | distributor | DIP | 32 | 0°C | 70°C | 138 K |
WS1M8V-100CCA | 100ns; 3.3V power supply; 2 x 512K x 8 dualithic module | distributor | DIP | 32 | 0°C | 70°C | 138 K |
WS1M8V-100CI | 100ns; 3.3V power supply; 2 x 512K x 8 dualithic module | distributor | DIP | 32 | -40°C | 85°C | 138 K |
WS1M8V-100CIA | 100ns; 3.3V power supply; 2 x 512K x 8 dualithic module | distributor | DIP | 32 | -40°C | 85°C | 138 K |
WS1M8V-100CM | 100ns; 3.3V power supply; 2 x 512K x 8 dualithic module | distributor | DIP | 32 | -55°C | 125°C | 138 K |
WS1M8V-100CMA | 100ns; 3.3V power supply; 2 x 512K x 8 dualithic module | distributor | DIP | 32 | -55°C | 125°C | 138 K |
WS512K32NV-100G2TQ | 100ns; 3.3V power supply; 512K x 32 SRAM module | distributor | HIP | 66 | - | - | 212 K |
WS512K32NV-100G2TQA | 100ns; 3.3V power supply; 512K x 32 SRAM module | distributor | HIP | 66 | - | - | 212 K |
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