| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| HY51V18163HGJ-5 | Dynamic RAM organized 1,048,576 words x 16bit, 50ns | distributor | SOJ | 42 | 0°C | 70°C | 107 K |
| HY51V18163HGJ-6 | Dynamic RAM organized 1,048,576 words x 16bit, 60ns | distributor | SOJ | 42 | 0°C | 70°C | 107 K |
| HY51V18163HGJ-7 | Dynamic RAM organized 1,048,576 words x 16bit, 70ns | distributor | SOJ | 42 | 0°C | 70°C | 107 K |
| HY51V18163HGJ-7 | Dynamic RAM organized 1,048,576 words x 16bit, 70ns | distributor | SOJ | 42 | 0°C | 70°C | 107 K |
| KV1811ETR | Variable capacitance diode | distributor | URD | 2 | -55°C | 85°C | 26 K |
| KV1811KTR | Variable capacitance diode | distributor | UFD | 2 | -55°C | 85°C | 22 K |
| KV1811KTR | Variable capacitance diode | distributor | UFD | 2 | -55°C | 85°C | 22 K |
| KV1812ETR | Variable capacitance diode | distributor | URD | 2 | -55°C | 85°C | 24 K |
| KV1812KTR | Variable capacitance diode | distributor | UFD | 2 | -55°C | 85°C | 23 K |
| VG26V18165CJ-5 | 1,048,576 x 16 CMOS dynamic RAM | distributor | SOJ | 42 | 0°C | 70°C | 231 K |
| VG26V18165CJ-6 | CMOS synchronous dynamic RAM | distributor | SOJ | 42 | 0°C | 70°C | 231 K |
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