| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| AQV410EH | PhotoMOS relay, GU (general use) E-type [1-channel (form B) type]. AC/DC type. I/O isolation: reanforced 5,000 VAC. Output rating: load voltage 350 V, load current 130 mA. Through hole terminal. Tube packing style. | distributor | - | 6 | -40°C | 85°C | 54 K |
| BYV4100 | Fast soft-recovery controlled avalanche rectifier | Philips-Semiconductors | SOD64 | - | - | - | 52 K |
| KM44V4100CK-5 | 4M x 4Bit CMOS dynamic RAM with fast page mode, 3.3V, 50ns | Samsung-Electronic | SOJ | 24 | 0°C | 70°C | 340 K |
| KM44V4100CK-6 | 4M x 4Bit CMOS dynamic RAM with fast page mode, 3.3V, 60ns | Samsung-Electronic | SOJ | 24 | 0°C | 70°C | 340 K |
| KM44V4100CKL-5 | 4M x 4Bit CMOS dynamic RAM with fast page mode, 3.3V, 50ns | Samsung-Electronic | SOJ | 24 | 0°C | 70°C | 340 K |
| KM44V4100CKL-6 | 4M x 4Bit CMOS dynamic RAM with fast page mode, 3.3V, 60ns | Samsung-Electronic | SOJ | 24 | 0°C | 70°C | 340 K |
| KM44V4100CS-5 | 4M x 4Bit CMOS dynamic RAM with fast page mode, 3.3V, 50ns | Samsung-Electronic | TSOP II | 24 | 0°C | 70°C | 340 K |
| KM44V4100CS-6 | 4M x 4Bit CMOS dynamic RAM with fast page mode, 3.3V, 60ns | Samsung-Electronic | TSOP II | 24 | 0°C | 70°C | 340 K |
| KM44V4100CSL-5 | 4M x 4Bit CMOS dynamic RAM with fast page mode, 3.3V, 50ns | Samsung-Electronic | TSOP II | 24 | 0°C | 70°C | 340 K |
| KM44V4100CSL-6 | 4M x 4Bit CMOS dynamic RAM with fast page mode, 3.3V, 60ns | Samsung-Electronic | TSOP II | 24 | 0°C | 70°C | 340 K |
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