| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| AQV410EHA | PhotoMOS relay, GU (general use) E-type [1-channel (form B) type]. AC/DC type. I/O isolation: reanforced 5,000 VAC. Output rating: load voltage 350 V, load current 130 mA. Surface-mount terminal. Tube packing style. | distributor | - | 6 | -40°C | 85°C | 54 K |
| AQV410EHAX | PhotoMOS relay, GU (general use) E-type [1-channel (form B) type]. AC/DC type. I/O isolation: reanforced 5,000 VAC. Output rating: load voltage 350 V, load current 130 mA. Surface-mount terminal. Tape and reel packing style. Picked from the 1/2/3-pin side | distributor | - | 6 | -40°C | 85°C | 54 K |
| AQV410EHAZ | PhotoMOS relay, GU (general use) E-type [1-channel (form B) type]. AC/DC type. I/O isolation: reanforced 5,000 VAC. Output rating: load voltage 350 V, load current 130 mA. Surface-mount terminal. Tape and reel packing style. Picked from the 4/5/6-pin side | distributor | - | 6 | -40°C | 85°C | 54 K |
| AQV410EHAZ | PhotoMOS relay, GU (general use) E-type [1-channel (form B) type]. AC/DC type. I/O isolation: reanforced 5,000 VAC. Output rating: load voltage 350 V, load current 130 mA. Surface-mount terminal. Tape and reel packing style. Picked from the 4/5/6-pin side | distributor | - | 6 | -40°C | 85°C | 54 K |
| FJV4101R | PNP Epitaxial Silicon Transistor | Fairchild-Semiconductor | - | - | - | - | 55 K |
| FJV4102R | PNP Epitaxial Silicon Transistor | Fairchild-Semiconductor | - | - | - | - | 55 K |
| FJV4103R | PNP Epitaxial Silicon Transistor | Fairchild-Semiconductor | - | - | - | - | 56 K |
| FJV4104R | PNP Epitaxial Silicon Transistor | Fairchild-Semiconductor | - | - | - | - | 89 K |
| FJV4104R | PNP Epitaxial Silicon Transistor | Fairchild-Semiconductor | - | - | - | - | 89 K |
| FJV4105R | PNP Epitaxial Silicon Transistor | Fairchild-Semiconductor | - | - | - | - | 88 K |
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