| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| HY57V651620BTC-55 | Synchronous DRAM organized 4 Banks x 1M x 16Bit, LVTT Linterface, 3.3V, 183MHz | distributor | TSOP II | 54 | 0°C | 70°C | 81 K |
| HY57V651620BTC-6 | Synchronous DRAM organized 4 Banks x 1M x 16Bit, LVTT Linterface, 3.3V, 166MHz | distributor | TSOP II | 54 | 0°C | 70°C | 81 K |
| MBM29LV651UE12TN | Flash memory CMOS 64M (4M x 16)bit | Fujitsu-Microelectronis | plastic TSOP | 48 | -40°C | 85°C | 625 K |
| MBM29LV651UE12TR | Flash memory CMOS 64M (4M x 16)bit | Fujitsu-Microelectronis | plastic TSOP | 48 | -40°C | 85°C | 625 K |
| MBM29LV651UE90TN | Flash memory CMOS 64M (4M x 16)bit | Fujitsu-Microelectronis | plastic TSOP | 48 | -40°C | 85°C | 625 K |
| MBM29LV651UE90TR | Flash memory CMOS 64M (4M x 16)bit | Fujitsu-Microelectronis | plastic TSOP | 48 | -40°C | 85°C | 625 K |
| MD51V65165-50JA | 4,194,304-word x 16-bit dynamic RAM | distributor | SOJ | 50 | 0°C | 70°C | 343 K |
| MD51V65165-50TA | 4,194,304-word x 16-bit dynamic RAM | distributor | TSOP | 50 | 0°C | 70°C | 343 K |
| MD51V65165-60JA | 4,194,304-word x 16-bit dynamic RAM | distributor | SOJ | 50 | 0°C | 70°C | 343 K |
| MD51V65165-60TA | 4,194,304-word x 16-bit dynamic RAM | distributor | TSOP | 50 | 0°C | 70°C | 343 K |
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