Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
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MH16V7245BATJ-5 | 1,207,959,552-bit (16,777,216-word by 72-bit) dynamic DRAM | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | - | 0°C | 70°C | 152 K |
MH16V7245BATJ-6 | 1,207,959,552-bit (16,777,216-word by 72-bit) dynamic DRAM | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | - | 0°C | 70°C | 152 K |
MH16V7245BWJ-5 | 1,207,959,552-bit (16,777,216-word by 72-bit) dynamic DRAM | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | - | 0°C | 70°C | 129 K |
MH16V7245BWJ-6 | 1,207,959,552-bit (16,777,216-word by 72-bit) dynamic DRAM | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | - | 0°C | 70°C | 129 K |
MH32V7245BST-5 | 2,415,919,104-bit (33,554,432-word by 72-bit) synchronous DRAM | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | - | 0°C | 70°C | 138 K |
MH32V7245BST-5 | 2415919104-bit (33554432-word by 72-bit) synchronous dynamic RAM | Mitsubishi-Electric-Corporation-Semiconductor-Group | TSOP | 168 | 0°C | 70°C | 138 K |
MH32V7245BST-6 | 2,415,919,104-bit (33,554,432-word by 72-bit) synchronous DRAM | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | - | 0°C | 70°C | 138 K |
MH32V7245BST-6 | 2415919104-bit (33554432-word by 72-bit) synchronous dynamic RAM | Mitsubishi-Electric-Corporation-Semiconductor-Group | TSOP | 168 | 0°C | 70°C | 138 K |
MH8V7245BAZTJ-5 | 603979776-bit (8388608-word by 72-bit) dynamic DRAM | Mitsubishi-Electric-Corporation-Semiconductor-Group | TSSOP | 168 | 0°C | 70°C | 147 K |
MH8V7245BAZTJ-6 | 603979776-bit (8388608-word by 72-bit) dynamic DRAM | Mitsubishi-Electric-Corporation-Semiconductor-Group | TSSOP | 168 | 0°C | 70°C | 147 K |
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