Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
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BUK436W-1000B | 1000 V, power MOS transistor | Philips-Semiconductors | SOT | 3 | - | - | 53 K |
BUK436W-1000B | 1000 V, power MOS transistor | Philips-Semiconductors | SOT | 3 | - | - | 53 K |
GBPC15W-10 | 1000 V, 15.0 A glass passivated single phase bridge rectifier | distributor | - | 4 | -50°C | 150°C | 130 K |
GBPC25W-10 | 1000 V, 25.0 A glass passivated single phase bridge rectifier | distributor | - | 4 | -50°C | 150°C | 130 K |
GBPC35W-10 | 1000 V, 35.0 A glass passivated single phase bridge rectifier | distributor | - | 4 | -50°C | 150°C | 130 K |
MT5C2568ECW-100L/883C | 32K x 8 SRAM memory array | distributor | LCC | 32 | -55°C | 125°C | 162 K |
MT5C2568ECW-100L/IT | 32K x 8 SRAM memory array | distributor | LCC | 32 | -40°C | 85°C | 162 K |
MT5C2568ECW-100L/XT | 32K x 8 SRAM memory array | distributor | LCC | 32 | -55°C | 125°C | 162 K |
MT5C2568ECW-100L/XT | 32K x 8 SRAM memory array | distributor | LCC | 32 | -55°C | 125°C | 162 K |
SW-106 | DC-3 GHz, high power GaAs SPDT switch | M-A-COM---manufacturer-of-RF | CR | 10 | -55°C | 125°C | 105 K |
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