| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| MGW12N120 | Insulated gate bipolar transistor | Motorola | - | 3 | -55°C | 150°C | 228 K |
| MGW12N120 | Insulated Gate Bipolar Transistor N-Channel | ON-Semiconductor | - | 3 | - | - | 136 K |
| MGW12N120D | Insulated gate bipolar transistor with anti-parallel diode | Motorola | - | 3 | -55°C | 150°C | 250 K |
| MGW12N120D | Insulated Gate Bipolar Transistor with Anti-Parallel Diode N-Channel | ON-Semiconductor | - | 3 | - | - | 168 K |
| STGW12NB60H | N-CHANNEL 12A - 600V TO-247 POWERMESH IGBT | SGS-Thomson-Microelectronics | - | - | - | - | 86 K |
| STGW12NB60HD | N-CHANNEL 12A - 600V TO-247 POWERMESH IGBT | SGS-Thomson-Microelectronics | - | - | - | - | 90 K |
| STW12NA50 | N-CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTOR | SGS-Thomson-Microelectronics | - | - | - | - | 147 K |
| STW12NA60 | N-CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTORS | SGS-Thomson-Microelectronics | - | - | - | - | 243 K |
| STW12NB60 | N-CHANNEL 600V 0.5 OHM 12A TO-247 POWERMESH MOSFET | SGS-Thomson-Microelectronics | - | - | - | - | 250 K |
| STW12NC60 | N-CHANNEL 600V 0.48 OHM 12A TO-247 POWERMESH II MOSFET | SGS-Thomson-Microelectronics | - | - | - | - | 86 K |
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