| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| PHW20N50E | PowerMOS transistor. Avalanche energy rated. | Philips-Semiconductors | TO247 | 3 | -55°C | 150°C | 27 K |
| STGW20NB60KD | N-CHANNEL 20A 600V TO-247 SHORT CIRCUIT PROOF POWERMESH IGBT | SGS-Thomson-Microelectronics | - | - | - | - | 312 K |
| STW20NK50Z | N-CHANNEL 500V - 0.23 OHM - 17A TO-247 ZENER-PROTECTED SUPERMESH POWERMOSFET | SGS-Thomson-Microelectronics | - | - | - | - | 133 K |
| STW20NM50 | N-CHANNEL 500V - 0.20 OHM - 20A TO-247 MDMESH POWER MOSFET | SGS-Thomson-Microelectronics | - | - | - | - | 256 K |
| STW20NM50FD | N-CHANNEL 500V 0.22 OHM 20A TO-247 FDMESH POWER MOSFET | SGS-Thomson-Microelectronics | - | - | - | - | 248 K |
| STW20NM60 | N-CHANNEL 600V - 0.26 OHM - 20A TO-247 MDMESH POWER MOSFET | SGS-Thomson-Microelectronics | - | - | - | - | 256 K |
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