Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
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ATF22V10CZ-12JC | High-performance EE PLD, 12ns | ATMEL-Corporation | PLCC | 28 | 0°C | 70°C | 281 K |
ATF22V10CZ-12PC | High-performance EE PLD, 12ns | ATMEL-Corporation | PDIP | 24 | 0°C | 70°C | 281 K |
ATF22V10CZ-12SC | High-performance EE PLD, 12ns | ATMEL-Corporation | SOIC | 24 | 0°C | 70°C | 281 K |
ATF22V10CZ-12XC | High-performance EE PLD, 12ns | ATMEL-Corporation | TSSOP | 24 | 0°C | 70°C | 281 K |
DLZ-12 | 12.0V; 1300W; 10Amp; standard TVS array. For military & aerospace data line protection, RS-232 & RS-423, microprocessor based equipment, multiple data & power bus line protection | distributor | DIP | 16 | -55°C | 150°C | 111 K |
DLZ-12A | 12.0V; 1300W; 10Amp; standard TVS array. For military & aerospace data line protection, RS-232 & RS-423, microprocessor based equipment, multiple data & power bus line protection | distributor | DIP | 16 | -55°C | 150°C | 111 K |
GAL20V8Z-12QJ | Zero power E2CMOS PLD, 12ns | Lattice-Semiconductor-Corporation | PLCC | 28 | 0°C | 75°C | 307 K |
GAL20V8Z-12QP | Zero power E2CMOS PLD, 12ns | Lattice-Semiconductor-Corporation | PDIP | 24 | 0°C | 75°C | 307 K |
GAL20V8Z-12QP | Zero power E2CMOS PLD, 12ns | Lattice-Semiconductor-Corporation | PDIP | 24 | 0°C | 75°C | 307 K |
KM41256AZ-12 | 256K x 1-bit DRAM, 120ns | Samsung-Electronic | ZIP | 16 | 0°C | 70°C | 988 K |
uPD70108HCZ-12 | 16-bit MOS microprocessor, 12.5MHz | NEC-Electronics-Inc- | PDIP | 40 | -40°C | 85°C | 5 M |
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