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Electronic component:Description:Manuf.PackagePinsT°minT°maxDatasheet
M4A3-512/192-10FAC10ns, 3.3V high performance E2 CMOS in-system programmable logicLattice-Semiconductor-CorporationBGA2560°C70°C1 M
M4A3-512/192-10FAI10ns, 3.3V high performance E2 CMOS in-system programmable logicLattice-Semiconductor-CorporationBGA256-40°C85°C1 M
M4A3-512/192-12FAC12ns, 3.3V high performance E2 CMOS in-system programmable logicLattice-Semiconductor-CorporationBGA2560°C70°C1 M
M4A3-512/192-12FAI12ns, 3.3V high performance E2 CMOS in-system programmable logicLattice-Semiconductor-CorporationBGA256-40°C85°C1 M
M4A3-512/192-14FAI14ns, 3.3V high performance E2 CMOS in-system programmable logicLattice-Semiconductor-CorporationBGA256-40°C85°C1 M
M4A3-512/256-10FAC10ns, 3.3V high performance E2 CMOS in-system programmable logicLattice-Semiconductor-CorporationBGA2560°C70°C1 M
M4A3-512/256-10FAI10ns, 3.3V high performance E2 CMOS in-system programmable logicLattice-Semiconductor-CorporationBGA256-40°C85°C1 M
M4A3-512/256-12FAC12ns, 3.3V high performance E2 CMOS in-system programmable logicLattice-Semiconductor-CorporationBGA2560°C70°C1 M
M4A3-512/256-12FAC12ns, 3.3V high performance E2 CMOS in-system programmable logicLattice-Semiconductor-CorporationBGA2560°C70°C1 M
M4A3-512/256-12FAI12ns, 3.3V high performance E2 CMOS in-system programmable logicLattice-Semiconductor-CorporationBGA256-40°C85°C1 M
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